Electronics · Tool

MOSFET Junction Temperature

Compute MOSFET junction temperature from drain current, RDS(on), thermal resistance, ambient temperature and duty cycle. Flags marginal and danger conditions against the configured Tj-max.

EndpointPOST /v1/electronics/mosfet-thermal-junctionVersionv1.0.0Added2026-05-16

Inputs

drain_current_aRequirednumber (A)Drain Current
required · min 0.001 · max 1000 · default 5
rds_on_mohmRequirednumber (mΩ)RDS(on)
required · min 0.1 · max 10000 · default 20
From the datasheet at the gate-drive voltage you use.
theta_ja_c_per_wRequirednumber (°C/W)θ-JA
required · min 0.1 · max 500 · default 62
Junction-to-ambient thermal resistance — depends heavily on copper area.
ambient_temp_cRequirednumber (°C)Ambient Temp
required · min -40 · max 125 · default 25
duty_cycleRequirednumberDuty Cycle
required · min 0.01 · max 1 · default 1
1.0 = continuous on. Use the actual on-time fraction for switched applications.
max_junction_temp_cRequirednumber (°C)Max Junction Temp
required · min 100 · max 200 · default 150
Datasheet Tj-max. 150 °C is typical for silicon, 175 °C for SiC.

Outputs

power_dissipation_wnumber (W)Power Dissipation
temp_rise_cnumber (°C)Temperature Rise
junction_temp_cnumber (°C)Junction Temperature
headroom_cnumber (°C)Headroom
statusstringStatus

Example request

curl · POST /v1/electronics/mosfet-thermal-junction
curl -X POST https://api.toolsamurai.com/v1/electronics/mosfet-thermal-junction \
  -H "Authorization: Bearer sk_free_•••••••••••••••" \
  -H "Content-Type: application/json" \
  -d '{
  "drain_current_a": 5,
  "rds_on_mohm": 20,
  "theta_ja_c_per_w": 62,
  "ambient_temp_c": 25,
  "duty_cycle": 1,
  "max_junction_temp_c": 150
}'

Example response

200 OK
{
  "ok": true,
  "tool": "mosfet-thermal-junction",
  "domain": "electronics",
  "version": "1.0.0",
  "result": {
    "power_dissipation_w": ,
    "temp_rise_c": ,
    "junction_temp_c": ,
    "headroom_c": ,
    "status": "…"
  },
  "meta": { "latency_ms": , "request_id": "req_…" }
}

Tags

mosfetthermaljunction-temperaturepower-dissipationelectronics